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IRL40SC228
Power MOSFET, N Channel, 40 V, 360 A, 650 µohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRL40SC228
Order Code
Re-Reel2803427RL
Cut Tape2803427
Product RangeStrongIRFET
Also Known AsIRL40SC228, SP001550368
Your Part Number
391 In Stock
1,600 more incoming. You can reserve stock now
391 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY34.210 | CNY34.21 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY34.210 (CNY38.6573) |
| 10+ | CNY21.670 (CNY24.4871) |
| 50+ | CNY18.790 (CNY21.2327) |
| 100+ | CNY15.910 (CNY17.9783) |
| 250+ | CNY15.590 (CNY17.6167) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRL40SC228
Order Code
Re-Reel2803427RL
Cut Tape2803427
Product RangeStrongIRFET
Also Known AsIRL40SC228, SP001550368
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id360A
Drain Source On State Resistance650µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation416W
No. of Pins7Pins
Operating Temperature Max175°C
Product RangeStrongIRFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
HEXFET® Power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, DC/AC inverters.
- Optimized for logic level drive
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
360A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
416W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
650µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
7Pins
Product Range
StrongIRFET
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001