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IRL3705NSTRLPBF
Power MOSFET, N Channel, 55 V, 89 A, 0.01 ohm, TO-263 (D2PAK), Surface Mount
No Longer Manufactured
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRL3705NSTRLPBFCopy
Order Code
Re-Reel2725998RL
Cut Tape2725998
Product RangeHEXFET
Also Known AsSP001558012
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id89A
Drain Source On State Resistance0.01ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
Alternatives for IRL3705NSTRLPBF
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
89A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
170W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00212