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IRFS3004TRL7PP
Power MOSFET, N Channel, 40 V, 240 A, 1250 µohm, TO-263 (D2PAK), Surface Mount
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY35.420 | CNY35.42 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY35.420 (CNY40.0246) |
| 10+ | CNY24.140 (CNY27.2782) |
| 100+ | CNY17.220 (CNY19.4586) |
| 500+ | CNY13.950 (CNY15.7635) |
| 1000+ | CNY13.680 (CNY15.4584) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFS3004TRL7PPCopy
Order Code
Re-Reel2725977RL
Cut Tape2725977
Product RangeHEXFET
Also Known AsSP001557236
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id240A
Drain Source On State Resistance1250µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation380W
No. of Pins7Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Single N-channel HEXFET® power MOSFET suitable for use in high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Normal level: optimized for 10V gate drive voltage
- Industry standard surface-mount power package
- High-current carrying capability package (up to 240A, die-size dependent)
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
240A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
380W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
1250µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
7Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001