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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR5410TRLPBFCopy
Order Code
Re-Reel2781133RL
Cut Tape2781133
Product RangeHEXFET
Also Known AsSP001578112
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id13A
Drain Source On State Resistance0.205ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation66W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
Alternatives for IRFR5410TRLPBF
2 Products Found
Product Overview
- Single -100v P-channel HEXFET® power MOSFET
- Advanced process technology
- Ultra low on-resistance
- Fast switching
- Fully avalanche rated
- Low RDS(on)
- Industry-leading quality
- Dynamic dv/dt rating
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
13A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
66W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.205ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426

