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IRFR5305TRLPBF
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFR5305TRLPBF
Order Code
Re-Reel2101421RL
Cut Tape2101421
Also Known AsSP001567854
Your Part Number
1,459 In Stock
6,000 more incoming. You can reserve stock now
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY14.500 | CNY14.50 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY14.500 (CNY16.385) |
| 10+ | CNY9.280 (CNY10.4864) |
| 100+ | CNY6.220 (CNY7.0286) |
| 500+ | CNY4.920 (CNY5.5596) |
| 1000+ | CNY4.110 (CNY4.6443) |
| 5000+ | CNY4.050 (CNY4.5765) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR5305TRLPBF
Order Code
Re-Reel2101421RL
Cut Tape2101421
Also Known AsSP001567854
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id31A
Drain Source On State Resistance0.065ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
Product Overview
The IRFR5305TRLPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Automotive, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
31A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000516