IRFR120NTRPBF
Power MOSFET, N Channel, 100 V, 9.4 A, 0.21 ohm, TO-252AA, Surface Mount
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY12.110 | CNY12.11 |
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY12.110 (CNY13.6843) |
| 10+ | CNY7.660 (CNY8.6558) |
| 100+ | CNY5.310 (CNY6.0003) |
| 500+ | CNY4.210 (CNY4.7573) |
| 1000+ | CNY3.360 (CNY3.7968) |
| 5000+ | CNY3.300 (CNY3.729) |
Product Information
Product Overview
The IRFR120NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
9.4A
TO-252AA
10V
48W
175°C
-
No SVHC (25-Jun-2025)
100V
0.21ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate