Print Page

IRFP4127PBF

Power MOSFET, N Channel, 200 V, 75 A, 0.021 ohm, TO-247AC, Through Hole

INFINEON
Image is for illustrative purposes only. Please refer to product description.
INFINEON IRFP4127PBF Power MOSFET, N Channel, 200 V, 75 A, 0.021 ohm, TO-247AC, Through Hole
ManufacturerINFINEON
Manufacturer Part NoIRFP4127PBFCopy
Manufacturer Standard Lead Time19 weeks
Order Code2781129
Product RangeHEXFET
Also Known AsSP001566148
Your Part Number
Technical Datasheet

Data Sheet

See all Technical Docs
608 In Stock

Need more?

608 Delivery in 5-6 Business Days(UK stock)
QuantityPrice (inc GST)
1+CNY42.050 (CNY47.5165)
10+CNY30.430 (CNY34.3859)
100+CNY25.500 (CNY28.815)
500+CNY21.930 (CNY24.7809)
1000+CNY20.020 (CNY22.6226)
Price for:Each
Minimum: 1
Multiple: 1
CNY42.05 (CNY47.52 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.

Product Information

  • INFINEON
    ManufacturerINFINEON
    Manufacturer Part NoIRFP4127PBFCopy
    Manufacturer Standard Lead Time19 weeks
    Order Code2781129
    Product RangeHEXFET
    Also Known AsSP001566148
    Technical Datasheet

    Data Sheet

    Channel TypeN Channel
    Drain Source Voltage Vds200V
    Continuous Drain Current Id75A
    Drain Source On State Resistance0.021ohm
    Transistor Case StyleTO-247AC
    Transistor MountingThrough Hole
    Rds(on) Test Voltage10V
    Gate Source Threshold Voltage Max5V
    Power Dissipation341W
    No. of Pins3Pins
    Operating Temperature Max175°C
    Product RangeHEXFET
    Qualification-
    MSLMSL 1 - Unlimited
    SVHCNo SVHC (21-Jan-2025)

Product Overview

  • HEXFET® power MOSFET suitable for use in high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits.

    • Improved gate, avalanche and dynamic dV/dt ruggedness
    • Fully characterized capacitance and avalanche SOA
    • Enhanced body diode dV/dt and dI/dt capability

    Warnings

    Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Technical Specifications

  • Channel Type

    N Channel

    Continuous Drain Current Id

    75A

    Transistor Case Style

    TO-247AC

    Rds(on) Test Voltage

    10V

    Power Dissipation

    341W

    Operating Temperature Max

    175°C

    Qualification

    -

    SVHC

    No SVHC (21-Jan-2025)

    Drain Source Voltage Vds

    200V

    Drain Source On State Resistance

    0.021ohm

    Transistor Mounting

    Through Hole

    Gate Source Threshold Voltage Max

    5V

    No. of Pins

    3Pins

    Product Range

    HEXFET

    MSL

    MSL 1 - Unlimited

Technical Docs 2

Legislation and Environmental

  • Country of Origin:
    Country in which last significant manufacturing process was carried outCountry of Origin:    Malaysia
    Country in which last significant manufacturing process was carried out
    Tariff No:85412900
    US ECCN:EAR99
    EU ECCN:NLR
    RoHS Compliant:Yes

    RoHS

    RoHS Phthalates Compliant:Yes

    RoHS

    SVHC:No SVHC (21-Jan-2025)
    Download Product Compliance Certificate

    Product Compliance Certificate

    Weight (kg):.007832