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IRFH4253DTRPBF

Dual MOSFET, N Channel + Schottky, 25 V, 145 A, 1100 µohm

INFINEON
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INFINEON IRFH4253DTRPBF Dual MOSFET, N Channel + Schottky, 25 V, 145 A, 1100 µohm
INFINEON IRFH4253DTRPBF
INFINEON IRFH4253DTRPBF
ManufacturerINFINEON
Manufacturer Part NoIRFH4253DTRPBFCopy
Order Code
Re-Reel2577150RL
Cut Tape2577150
Product RangeFastIRFET HEXFET Series
Also Known AsSP001556246
Your Part Number
Technical Datasheet

Data Sheet

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No Longer Stocked
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Product Information

  • INFINEON
    ManufacturerINFINEON
    Manufacturer Part NoIRFH4253DTRPBFCopy
    Order Code
    Re-Reel2577150RL
    Cut Tape2577150
    Product RangeFastIRFET HEXFET Series
    Also Known AsSP001556246
    Technical Datasheet

    Data Sheet

    Channel TypeN Channel + Schottky
    Drain Source Voltage Vds N Channel25V
    Drain Source Voltage Vds P Channel-
    Continuous Drain Current Id N Channel145A
    Continuous Drain Current Id P Channel-
    Drain Source On State Resistance N Channel1100µohm
    Drain Source On State Resistance P Channel-
    Transistor Case StyleQFN
    No. of Pins10Pins
    Power Dissipation N Channel50W
    Power Dissipation P Channel-
    Operating Temperature Max150°C
    Product RangeFastIRFET HEXFET Series
    Qualification-
    MSLMSL 2 - 1 year

Product Overview

  • IRFH4253DTRPBF is a HEXFET® Power MOSFET. Application includes control and synchronous MOSFETs for synchronous buck converters.

    • Control and synchronous MOSFETs in one package, increased power density
    • Low charge control MOSFET (10nC typical), lower switching losses
    • Low RDSON synchronous MOSFET (<lt/>1.45mohm), lower conduction losses
    • Intrinsic schottky diode with low forward voltage on Q2, lower switching losses
    • Environmentally friendlier, industrial qualification, increased reliability
    • Drain-to-source breakdown voltage is 25V (typ, Q1, Q2, VGS = 0V, ID = 250µA/1.0mA)
    • Breakdown voltage temp coefficient is 22mV/°C (typ, Q1, Q2, reference to 25°C, ID = 1.0mA)
    • Gate threshold voltage is 1.6V (typ, Q1: VDS = VGS, ID = 35µA, Q2: VDS = VGS, ID = 100µA)
    • Drain-to-source leakage current is 1.0µA (typ, VDS = 20V, VGS = 0V, TJ = 25°C)
    • Dual PQFN package, operating junction and storage temperature range from -55 to + 150°C

Technical Specifications

  • Channel Type

    N Channel + Schottky

    Drain Source Voltage Vds P Channel

    -

    Continuous Drain Current Id P Channel

    -

    Drain Source On State Resistance P Channel

    -

    No. of Pins

    10Pins

    Power Dissipation P Channel

    -

    Product Range

    FastIRFET HEXFET Series

    MSL

    MSL 2 - 1 year

    Drain Source Voltage Vds N Channel

    25V

    Continuous Drain Current Id N Channel

    145A

    Drain Source On State Resistance N Channel

    1100µohm

    Transistor Case Style

    QFN

    Power Dissipation N Channel

    50W

    Operating Temperature Max

    150°C

    Qualification

    -

Technical Docs 3

Legislation and Environmental

  • Country of Origin:
    Country in which last significant manufacturing process was carried outCountry of Origin:    China
    Country in which last significant manufacturing process was carried out
    Tariff No:85412900
    US ECCN:EAR99
    EU ECCN:NLR
    RoHS Compliant:Yes

    RoHS

    RoHS Phthalates Compliant:Yes

    RoHS

    Download Product Compliance Certificate

    Product Compliance Certificate

    Weight (kg):.0001