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IRFH4253DTRPBF
Dual MOSFET, N Channel + Schottky, 25 V, 145 A, 1100 µohm
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ManufacturerINFINEON
Manufacturer Part NoIRFH4253DTRPBF
Order Code
Re-Reel2577150RL
Cut Tape2577150
Product RangeFastIRFET HEXFET Series
Also Known AsSP001556246
Your Part Number
No Longer Stocked
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFH4253DTRPBF
Order Code
Re-Reel2577150RL
Cut Tape2577150
Product RangeFastIRFET HEXFET Series
Also Known AsSP001556246
Technical Datasheet
Channel TypeN Channel + Schottky
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel145A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel1100µohm
Drain Source On State Resistance P Channel-
Transistor Case StyleQFN
No. of Pins10Pins
Power Dissipation N Channel50W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeFastIRFET HEXFET Series
Qualification-
Product Overview
IRFH4253DTRPBF is a HEXFET® Power MOSFET. Application includes control and synchronous MOSFETs for synchronous buck converters.
- Control and synchronous MOSFETs in one package, increased power density
- Low charge control MOSFET (10nC typical), lower switching losses
- Low RDSON synchronous MOSFET (<lt/>1.45mohm), lower conduction losses
- Intrinsic schottky diode with low forward voltage on Q2, lower switching losses
- Environmentally friendlier, industrial qualification, increased reliability
- Drain-to-source breakdown voltage is 25V (typ, Q1, Q2, VGS = 0V, ID = 250µA/1.0mA)
- Breakdown voltage temp coefficient is 22mV/°C (typ, Q1, Q2, reference to 25°C, ID = 1.0mA)
- Gate threshold voltage is 1.6V (typ, Q1: VDS = VGS, ID = 35µA, Q2: VDS = VGS, ID = 100µA)
- Drain-to-source leakage current is 1.0µA (typ, VDS = 20V, VGS = 0V, TJ = 25°C)
- Dual PQFN package, operating junction and storage temperature range from -55 to + 150°C
Technical Specifications
Channel Type
N Channel + Schottky
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
10Pins
Power Dissipation P Channel
-
Product Range
FastIRFET HEXFET Series
MSL
MSL 2 - 1 year
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
145A
Drain Source On State Resistance N Channel
1100µohm
Transistor Case Style
QFN
Power Dissipation N Channel
50W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001