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IRF7480MTRPBF
Power MOSFET, N Channel, 40 V, 330 A, 950 µohm, DirectFET ME, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF7480MTRPBFCopy
Manufacturer Standard Lead Time51 weeks
Order Code
Re-Reel2709878RL
Cut Tape2709878
Product RangeStrongIRFET, DirectFET
Also Known AsSP001566252
Your Part Number
1,124 In Stock
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1,124 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY28.950 | CNY28.95 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY28.950 (CNY32.7135) |
| 10+ | CNY18.850 (CNY21.3005) |
| 100+ | CNY13.060 (CNY14.7578) |
| 500+ | CNY10.640 (CNY12.0232) |
| 1000+ | CNY10.290 (CNY11.6277) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7480MTRPBFCopy
Manufacturer Standard Lead Time51 weeks
Order Code
Re-Reel2709878RL
Cut Tape2709878
Product RangeStrongIRFET, DirectFET
Also Known AsSP001566252
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id330A
Drain Source On State Resistance950µohm
Transistor Case StyleDirectFET ME
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation96W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeStrongIRFET, DirectFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
IRF7480MTRPBF is a DirectFET® N-channel power MOSFET. Typical applications include brushed motor drive applications, BLDC motor drive applications, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, and DC/AC inverters.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dv/dt and di/dt capability
- Drain-to-source breakdown voltage is 40V min at VGS = 0V, ID = 250µA, TJ = 25°C
- Static drain-to-source on-resistance is 0.95mohm typ at VGS = 10V, ID = 132A, TJ = 25°C
- Drain-to-source leakage current is 1.0µA max at VDS = 40V, VGS = 0V, TJ = 25°C
- Reverse recovery time is 44ns typ at TJ = 25°C, VR = 34V
- Reverse recovery current is 2.1A typ at TJ = 25°C
- DirectFET® ME package
- Operating junction and storage temperature range from -55 to + 150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
330A
Transistor Case Style
DirectFET ME
Rds(on) Test Voltage
10V
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
950µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
StrongIRFET, DirectFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000156