IRF7343TRPBF
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.890 (CNY13.4357) |
| 10+ | CNY7.550 (CNY8.5315) |
| 100+ | CNY5.040 (CNY5.6952) |
| 500+ | CNY3.960 (CNY4.4748) |
| 1000+ | CNY3.290 (CNY3.7177) |
| 5000+ | CNY3.230 (CNY3.6499) |
Product Information
Product Overview
The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Fully avalanche rated
Applications
Industrial, Power Management
Technical Specifications
Complementary N and P Channel
55V
4.7A
0.043ohm
8Pins
2W
-
-
55V
4.7A
0.043ohm
SOIC
2W
150°C
-
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate