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IRF7313TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 6.5 A, 6.5 A, 0.023 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF7313TRPBFCopy
Order Code
Re-Reel2468008RL
Cut Tape2468008
Also Known AsSP001562160
Your Part Number
No Longer Manufactured
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7313TRPBFCopy
Order Code
Re-Reel2468008RL
Cut Tape2468008
Also Known AsSP001562160
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6.5A
Continuous Drain Current Id P Channel6.5A
Drain Source On State Resistance N Channel0.023ohm
Drain Source On State Resistance P Channel0.023ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Alternatives for IRF7313TRPBF
1 Product Found
Product Overview
The IRF7313TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Fully avalanche rated
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
6.5A
Drain Source On State Resistance P Channel
0.023ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
6.5A
Drain Source On State Resistance N Channel
0.023ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000194