IRF7104TRPBF
Dual MOSFET, P Channel, 20 V, 20 V, 2.3 A, 2.3 A, 0.19 ohm
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY10.820 | CNY10.82 |
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY10.820 (CNY12.2266) |
| 10+ | CNY6.740 (CNY7.6162) |
| 100+ | CNY4.530 (CNY5.1189) |
| 500+ | CNY3.540 (CNY4.0002) |
| 1000+ | CNY2.780 (CNY3.1414) |
| 5000+ | CNY2.630 (CNY2.9719) |
Product Information
Product Overview
The IRF7104TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
P Channel
20V
2.3A
0.19ohm
8Pins
2W
-
MSL 1 - Unlimited
20V
2.3A
0.19ohm
SOIC
2W
150°C
-
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate