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IRF6215STRLPBF
Power MOSFET, P Channel, 150 V, 13 A, 0.29 ohm, TO-263 (D2PAK), Surface Mount
No Longer Manufactured
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6215STRLPBFCopy
Order Code
Re-Reel2725889RL
Cut Tape2725889
Product RangeHEXFET
Also Known AsSP001563306
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id13A
Drain Source On State Resistance0.29ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
13A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.29ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001