IRF3205STRLPBF
Power MOSFET, N Channel, 55 V, 110 A, 8000 µohm, TO-263 (D2PAK), Surface Mount
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY20.710 | CNY20.71 |
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY20.710 (CNY23.4023) |
| 10+ | CNY12.820 (CNY14.4866) |
| 50+ | CNY10.970 (CNY12.3961) |
| 100+ | CNY9.110 (CNY10.2943) |
| 250+ | CNY8.930 (CNY10.0909) |
Product Information
Product Overview
The IRF3205STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
Applications
Power Management
Technical Specifications
N Channel
110A
TO-263 (D2PAK)
10V
200W
175°C
-
No SVHC (25-Jun-2025)
55V
8000µohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate