
Need more?
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY21.250 (CNY24.0125) |
| 10+ | CNY13.800 (CNY15.594) |
| 100+ | CNY9.460 (CNY10.6898) |
| 500+ | CNY7.210 (CNY8.1473) |
| 1000+ | CNY7.070 (CNY7.9891) |
| 5000+ | CNY6.930 (CNY7.8309) |
Product Information
Product Overview
The IRF1407STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
Applications
Power Management
Technical Specifications
N Channel
100A
TO-263 (D2PAK)
10V
3.8W
175°C
-
Lead (25-Jun-2025)
75V
7800µohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
