IRF1407PBF
Power MOSFET, N Channel, 75 V, 130 A, 7800 µohm, TO-220AB, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY21.340 (CNY24.1142) |
| 10+ | CNY10.590 (CNY11.9667) |
| 100+ | CNY9.600 (CNY10.848) |
| 500+ | CNY7.590 (CNY8.5767) |
| 1000+ | CNY7.440 (CNY8.4072) |
| 5000+ | CNY7.290 (CNY8.2377) |
Product Information
Product Overview
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
Applications
Motor Drive & Control, Automotive, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
130A
TO-220AB
10V
330W
175°C
-
No SVHC (25-Jun-2025)
75V
7800µohm
Through Hole
4V
3Pins
-
-
Technical Docs (2)
Alternatives for IRF1407PBF
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Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate