IPW60R041C6FKSA1
Power MOSFET, N Channel, 600 V, 77.5 A, 0.041 ohm, TO-247, Through Hole
Need more?
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY118.590 (CNY134.0067) |
| 5+ | CNY104.460 (CNY118.0398) |
| 10+ | CNY90.320 (CNY102.0616) |
| 50+ | CNY82.810 (CNY93.5753) |
| 100+ | CNY75.290 (CNY85.0777) |
| 250+ | CNY67.060 (CNY75.7778) |
Product Information
Product Overview
The IPW60R041C6 is a 600V N-channel CoolMOS™ Power MOSFET designed according to the Superjunction (SJ) principle with high class innovation. The C6 MOSFET provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. CoolMOS™ Superjunction power MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems.
- Easy to control of switching behaviour
- Very high commutation ruggedness
- Better light load efficiency compared to C3
- Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
- Improved power density
- Improved reliability
- Improved efficiency in hard switching applications
- Reduces possible ringing due to PCB layout
Applications
Consumer Electronics, Power Management, Communications & Networking, Computers & Computer Peripherals, Alternative Energy, Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
77.5A
TO-247
10V
481W
150°C
-
No SVHC (25-Jun-2025)
600V
0.041ohm
Through Hole
3V
3Pins
-
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate