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IPP052N06L3GXKSA1
Power MOSFET, N Channel, 60 V, 80 A, 4200 µohm, TO-220, Through Hole
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP052N06L3GXKSA1Copy
Order Code2709874
Product RangeOptiMOS 3
Also Known AsIPP052N06L3 G, SP000680802
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id80A
Drain Source On State Resistance4200µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation115W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Alternatives for IPP052N06L3GXKSA1
4 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
115W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
4200µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
OptiMOS 3
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454