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IPP023N04NGXKSA1
Power MOSFET, N Channel, 40 V, 90 A, 1900 µohm, TO-220, Through Hole
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP023N04NGXKSA1Copy
Order Code3155117
Product RangeOptiMOS 3
Also Known AsIPP023N04N G, SP000680762
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id90A
Drain Source On State Resistance1900µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation167W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
167W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
1900µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
OptiMOS 3
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002