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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY16.000 (CNY18.080) |
| 10+ | CNY10.980 (CNY12.4074) |
| 100+ | CNY7.420 (CNY8.3846) |
| 500+ | CNY5.930 (CNY6.7009) |
| 1000+ | CNY5.380 (CNY6.0794) |
| 5000+ | CNY4.830 (CNY5.4579) |
Product Information
Product Overview
The IPD60R380C6 is a 600V N-channel CoolMOS™ Power MOSFET designed according to the Superjunction (SJ) principle with high class innovation. The C6 MOSFET provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. CoolMOS™ Superjunction power MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems.
- Easy to control of switching behaviour
- Very high commutation ruggedness
- Better light load efficiency compared to C3
- Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
- Improved power density
- Improved reliability
- Improved efficiency in hard switching applications
- Reduces possible ringing due to PCB layout
Applications
Consumer Electronics, Power Management, Communications & Networking, Computers & Computer Peripherals, Alternative Energy, Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
10.6A
TO-252 (DPAK)
10V
83W
150°C
-
No SVHC (25-Jun-2025)
600V
0.38ohm
Surface Mount
3V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for IPD60R380C6ATMA1
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Associated Products
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
