IPD25CN10NGATMA1
Power MOSFET, N Channel, 100 V, 35 A, 0.025 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY13.260 (CNY14.9838) |
| 10+ | CNY8.470 (CNY9.5711) |
| 100+ | CNY5.650 (CNY6.3845) |
| 500+ | CNY4.460 (CNY5.0398) |
| 1000+ | CNY3.440 (CNY3.8872) |
| 5000+ | CNY3.380 (CNY3.8194) |
Product Information
Product Overview
The IPD25CN10N G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Excellent switching performance
- Environmentally-friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy to design
Applications
Power Management, Motor Drive & Control, Industrial, Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
35A
TO-252 (DPAK)
10V
71W
175°C
-
No SVHC (25-Jun-2025)
100V
0.025ohm
Surface Mount
3V
3Pins
-
MSL 3 - 168 hours
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate