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IPB60R299CPAATMA1
Power MOSFET, N Channel, 600 V, 11 A, 0.27 ohm, TO-263 (D2PAK), Surface Mount
No Longer Manufactured
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB60R299CPAATMA1
Order Code
Re-Reel3294653RL
Cut Tape3294653
Product RangeCoolMOS
Also Known AsIPB60R299CPA, SP000539970
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id11A
Drain Source On State Resistance0.27ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation96W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS
QualificationAEC-Q101
SVHCNo SVHC (27-Jun-2018)
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
11A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
CoolMOS
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.019958