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IPB081N06L3GATMA1
Power MOSFET, N Channel, 60 V, 50 A, 8100 µohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB081N06L3GATMA1Copy
Manufacturer Standard Lead Time12 weeks
Order Code1775548
Also Known AsIPB081N06L3 G, SP000398076
Your Part Number
745 In Stock
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745 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY15.470 (CNY17.4811) |
| 10+ | CNY9.920 (CNY11.2096) |
| 100+ | CNY6.850 (CNY7.7405) |
| 500+ | CNY5.810 (CNY6.5653) |
| 1000+ | CNY4.620 (CNY5.2206) |
| 5000+ | CNY4.530 (CNY5.1189) |
Price for:Each
Minimum: 1
Multiple: 1
CNY15.47 (CNY17.48 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB081N06L3GATMA1Copy
Manufacturer Standard Lead Time12 weeks
Order Code1775548
Also Known AsIPB081N06L3 G, SP000398076
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
Drain Source On State Resistance8100µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPB081N06L3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- Superior thermal resistance
Applications
Power Management, Alternative Energy, Motor Drive & Control, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
79W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
8100µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536