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IPA057N06N3GXKSA1
Power MOSFET, N Channel, 60 V, 60 A, 4600 µohm, TO-220, Through Hole
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPA057N06N3GXKSA1Copy
Order Code2781061
Product RangeOptiMOS 3
Also Known AsIPA057N06N3 G, SP000457582
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
Drain Source On State Resistance4600µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
SVHCNo SVHC (27-Jun-2018)
Alternatives for IPA057N06N3GXKSA1
3 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
4600µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
OptiMOS 3
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00332