IMDQ65R010M2HXUMA1
Silicon Carbide MOSFET, Single, N Channel, 154 A, 650 V, 0.091 ohm, HDSOP
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY172.900 (CNY195.377) |
| 5+ | CNY150.600 (CNY170.178) |
| 10+ | CNY128.290 (CNY144.9677) |
| 50+ | CNY122.730 (CNY138.6849) |
| 100+ | CNY117.170 (CNY132.4021) |
| 250+ | CNY114.830 (CNY129.7579) |
Product Information
Product Overview
IMDQ65R010M2HXUMA1 is a CoolSiC™ MOSFET 650V Generation 2 (G2) (G2) in Q-DPAK package. It utilizes the G2 superior switching performance, which also provides advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density. Typical applications include SMPS, solar PV inverters, energy storage and battery formation, UPS, EV charging infrastructure and motor drives.
- 10mohm RDs(on) typical
- Ultra‑low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn‑on even with 0V turn‑off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- .XT interconnection technology for best‑in‑class thermal performance
- Enables high efficiency and high power density designs
Technical Specifications
Single
154A
0.091ohm
22Pins
5.6V
175°C
MSL 3 - 168 hours
N Channel
650V
HDSOP
20V
651W
CoolSiC G2 Series
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate