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FF1000UXTR23T2M1B5BPSA1
Silicon Carbide MOSFET, Half Bridge, N Channel, 1.335 kA, 2.3 kV, 1190 µohm, Module
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ManufacturerINFINEON
Manufacturer Part NoFF1000UXTR23T2M1B5BPSA1Copy
Order Code4749213
Product RangeXHP 2 Series
Also Known AsSP006041778 and FF1000UXTR23T2M1_B5
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY31,561.210 (CNY35,664.1673) |
Price for:Each
Minimum: 1
Multiple: 1
CNY31,561.21 (CNY35,664.17 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFF1000UXTR23T2M1B5BPSA1Copy
Order Code4749213
Product RangeXHP 2 Series
Also Known AsSP006041778 and FF1000UXTR23T2M1_B5
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id1.335kA
Drain Source Voltage Vds2.3kV
Drain Source On State Resistance1190µohm
Transistor Case StyleModule
No. of Pins15Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max5.15V
Power Dissipation-
Operating Temperature Max175°C
Product RangeXHP 2 Series
SVHCNo SVHC (25-Jun-2025)
Product Overview
FF1000UXTR23T2M1B5BPSA1 is an XHP™2 series, 2.3kV, 1000A silicon carbide (SiC) MOSFET half-bridge module. It features Infineon’s advanced .XT interconnection technology for low inductance and reduced switching losses, delivering high efficiency and reliability in demanding power applications. With an on-resistance of approximately 0.95mohm and high thermal performance, it is ideal for renewable energy systems, traction drives, energy storage systems, and industrial motor drives requiring high power density and fast switching performance.
- Continuous drain current (IDN) of 2000A and repetitive peak current (IDRM) of 4000A
- High current density for efficient power handling
- Low inductive design to minimize parasitic effects
- Low switching losses for improved efficiency
- Maximum operating junction temperature (Tvj,op) of 175°C
- AlN substrate offering low thermal resistance
- AlSiC baseplate for excellent thermal cycling capability
- High creepage and clearance distances for enhanced safety
- High CTI (>600) package ensuring superior insulation performance
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
1.335kA
Drain Source On State Resistance
1190µohm
No. of Pins
15Pins
Gate Source Threshold Voltage Max
5.15V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
2.3kV
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
XHP 2 Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:3A228.c
EU ECCN:3A228.c
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001