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BSO615CGHUMA1
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 3.1 A, 3.1 A, 0.11 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSO615CGHUMA1Copy
Order Code
Re-Reel2480777RL
Cut Tape2480777
Also Known AsBSO615C G, SP000216311
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY10.360 | CNY10.36 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY10.360 (CNY11.7068) |
| 10+ | CNY7.180 (CNY8.1134) |
| 100+ | CNY5.310 (CNY6.0003) |
| 500+ | CNY4.480 (CNY5.0624) |
| 1000+ | CNY3.790 (CNY4.2827) |
| 5000+ | CNY3.600 (CNY4.068) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSO615CGHUMA1Copy
Order Code
Re-Reel2480777RL
Cut Tape2480777
Also Known AsBSO615C G, SP000216311
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel3.1A
Continuous Drain Current Id P Channel3.1A
Drain Source On State Resistance N Channel0.11ohm
Drain Source On State Resistance P Channel0.3ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSO615C G is a SIPMOS® dual N/P-channel enhancement-mode Small Signal Transistor for DC-to-DC converter and on-board charger applications. It is a complementary MOSFET with n-channel and a p-channel power transistor within the same package.
- Avalanche rated
- Logic level
Applications
Industrial, Power Management, Motor Drive & Control, Automotive
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
3.1A
Drain Source On State Resistance P Channel
0.3ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
3.1A
Drain Source On State Resistance N Channel
0.11ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Indonesia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Indonesia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005