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BSO220N03MDGXUMA1
Dual MOSFET, N Channel, 30 V, 30 V, 6 A, 6 A, 0.0183 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSO220N03MDGXUMA1Copy
Manufacturer Standard Lead Time21 weeks
Order Code
Re-Reel2432714RL
Cut Tape2432714
Also Known AsBSO220N03MD G, SP000447478
Your Part Number
3,461 In Stock
Need more?
3,461 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY6.570 | CNY32.85 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY6.570 (CNY7.4241) |
| 50+ | CNY5.450 (CNY6.1585) |
| 100+ | CNY4.320 (CNY4.8816) |
| 500+ | CNY3.410 (CNY3.8533) |
| 1000+ | CNY3.040 (CNY3.4352) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSO220N03MDGXUMA1Copy
Manufacturer Standard Lead Time21 weeks
Order Code
Re-Reel2432714RL
Cut Tape2432714
Also Known AsBSO220N03MD G, SP000447478
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel6A
Drain Source On State Resistance N Channel0.0183ohm
Drain Source On State Resistance P Channel0.0183ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSO220N03MD G is a dual N-channel MOSFET optimized for 5V driver application (notebook, VGA and POL) and qualified for consumer level application. The ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages make OptiMOS™ power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in server, data-com and telecom applications.
- Low FOMSW for high frequency SMPS
- 100% Avalanche tested
- Very low ON-resistance
- Excellent gate charge
- Halogen-free
Applications
Industrial, Power Management, Communications & Networking
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance P Channel
0.0183ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Product Range
-
MSL
MSL 3 - 168 hours
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.0183ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006