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BSO150N03MDGXUMA1
Dual MOSFET, N Channel, 30 V, 30 V, 8 A, 8 A, 0.015 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSO150N03MDGXUMA1Copy
Order Code
Re-Reel2480752RL
Cut Tape2480752
Also Known AsBSO150N03MD G, SP000447476
Your Part Number
1,625 In Stock
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18 Next business day delivery available(Shanghai stock)
1,607 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY6.250 | CNY6.25 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY6.250 (CNY7.0625) |
| 10+ | CNY3.890 (CNY4.3957) |
| 100+ | CNY2.540 (CNY2.8702) |
| 500+ | CNY2.440 (CNY2.7572) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSO150N03MDGXUMA1Copy
Order Code
Re-Reel2480752RL
Cut Tape2480752
Also Known AsBSO150N03MD G, SP000447476
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.015ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSO150N03MD G is a dual N-channel MOSFET optimized for 5V driver application (notebook, VGA and POL) and qualified for consumer level application. The ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages make OptiMOS™ power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in server, data-com and telecom applications.
- Low FOMSW for high frequency SMPS
- 100% Avalanche tested
- Very low ON-resistance
- Excellent gate charge
- Halogen-free
Applications
Industrial, Power Management, Communications & Networking
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Product Range
-
MSL
MSL 3 - 168 hours
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.015ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005