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BSC014N04LSATMA1
Power MOSFET, N Channel, 40 V, 100 A, 1400 µohm, TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC014N04LSATMA1Copy
Manufacturer Standard Lead Time58 weeks
Order Code
EACH 2480706
EACH 2480706RL
Also Known AsBSC014N04LS , SP000871196
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 58 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.080 (CNY12.5204) |
| 10+ | CNY7.370 (CNY8.3281) |
| 100+ | CNY5.630 (CNY6.3619) |
| 500+ | CNY4.640 (CNY5.2432) |
| 1000+ | CNY4.040 (CNY4.5652) |
| 5000+ | CNY3.770 (CNY4.2601) |
Price for:Each
Minimum: 1
Multiple: 1
CNY11.08 (CNY12.52 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC014N04LSATMA1Copy
Manufacturer Standard Lead Time58 weeks
Order Code
EACH 2480706
EACH 2480706RL
Also Known AsBSC014N04LS , SP000871196
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance1400µohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation96W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BSC014N04LS is a N-channel Power MOSFET features not only the industry's lowest RDS (ON) but also a perfect switching behaviour for fast switching applications. 15% lower RDS (ON) and 31% lower figure of merit (RDS (ON) x Qg) compared to alternative devices has been realized by advanced thin wafer technology.
- Optimized for synchronous rectification
- Integrated Schottky-like diode
- 100% Avalanche tested
- Superior thermal resistance
- Qualified according to JEDEC for target applications
- Higher solder joint reliability due to enlarged source interconnection
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- Halogen-free
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
1400µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005