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1ED2147S65FXUMA1
Gate Driver, 1 Channels, Non-Isolated, High Side, Si MOSFET, 8 Pins, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part No1ED2147S65FXUMA1Copy
Order Code4695799
Also Known As1ED2147S65F, SP005826771
Your Part Number
2,280 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY10.450 (CNY11.8085) |
| 10+ | CNY6.900 (CNY7.797) |
| 50+ | CNY6.510 (CNY7.3563) |
| 100+ | CNY6.120 (CNY6.9156) |
| 250+ | CNY5.750 (CNY6.4975) |
| 500+ | CNY5.520 (CNY6.2376) |
| 1000+ | CNY5.340 (CNY6.0342) |
| 2500+ | CNY5.300 (CNY5.989) |
Price for:Each
Minimum: 1
Multiple: 1
CNY10.45 (CNY11.81 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part No1ED2147S65FXUMA1Copy
Order Code4695799
Also Known As1ED2147S65F, SP005826771
Technical Datasheet
No. of Channels1Channels
Gate Driver TypeNon-Isolated
Driver ConfigurationHigh Side
Power Switch TypeSi MOSFET
No. of Pins8Pins
IC Case / PackageSOIC
IC MountingSurface Mount
Input TypeLogic
Source Current4A
Sink Current-4A
Supply Voltage Min6.6V
Supply Voltage Max22V
Operating Temperature Min-40°C
Operating Temperature Max125°C
Input Delay55ns
Output Delay55ns
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
1ED2147S65FXUMA1 is a 1ED21x7x family 650V high-side gate driver with overcurrent protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD). The over-current protection and under-voltage lockout circuit detects over-current / under-voltage in the driven power transistor and terminates the gate drive voltage. An open-drain FAULT signal is provided to indicate that an over-current shutdown has occurred. Potential applications include motor drives, general purpose inverters, Forklift, and light electric vehicles.
- Infineon thin-film-SOI-technology
- Integrated ultra-fast, low RDS(ON) bootstrap diode
- Negative VS transient immunity of 100V
- Detection of overcurrent and under voltage supply
- Multi-function RCIN/fault/enable (RFE) with programmable fault clear time
- High-side floating well supply offset voltage is 650V max at TA =25°C
- VCC quiescent supply current is 400µA max at (VCC– COM) = (VB – VS) = 15V and TA = 25°C
- Si MOSFET target transistor
- PG-DSO-8 package
- Ambient temperature range from -40 to 125°C
Technical Specifications
No. of Channels
1Channels
Driver Configuration
High Side
No. of Pins
8Pins
IC Mounting
Surface Mount
Source Current
4A
Supply Voltage Min
6.6V
Operating Temperature Min
-40°C
Input Delay
55ns
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Gate Driver Type
Non-Isolated
Power Switch Type
Si MOSFET
IC Case / Package
SOIC
Input Type
Logic
Sink Current
-4A
Supply Voltage Max
22V
Operating Temperature Max
125°C
Output Delay
55ns
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001