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DI7A5N65D2K-AQ
Power MOSFET, N Channel, 650 V, 7.5 A, 0.43 ohm, TO-263AB (D2PAK), Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY23.450 (CNY26.4985) |
| 10+ | CNY14.370 (CNY16.2381) |
| 100+ | CNY11.150 (CNY12.5995) |
| 500+ | CNY9.850 (CNY11.1305) |
| 1000+ | CNY8.620 (CNY9.7406) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY23.45 (CNY26.50 inc GST)
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Product Information
ManufacturerDIOTEC
Manufacturer Part NoDI7A5N65D2K-AQCopy
Order Code4698096
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id7.5A
Drain Source On State Resistance0.43ohm
Transistor Case StyleTO-263AB (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation62.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCLead (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Transistor Case Style
TO-263AB (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
62.5W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.43ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0021