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DMP6185SEQ-13
Power MOSFET, P Channel, 60 V, 3 A, 0.11 ohm, SOT-223, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMP6185SEQ-13Copy
Order Code
Re-Reel3943821RL
Cut Tape3943821
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | CNY5.530 | CNY27.65 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.530 (CNY6.2489) |
| 10+ | CNY3.290 (CNY3.7177) |
| 100+ | CNY2.210 (CNY2.4973) |
| 500+ | CNY1.750 (CNY1.9775) |
| 1000+ | CNY1.250 (CNY1.4125) |
| 5000+ | CNY1.230 (CNY1.3899) |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMP6185SEQ-13Copy
Order Code
Re-Reel3943821RL
Cut Tape3943821
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id3A
Drain Source On State Resistance0.11ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.2W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCLead (25-Jun-2025)
Product Overview
DMP6185SEQ-13 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include motor control, transformer driving switch, DC-DC converters, power management functions, and uninterrupted power supply.
- 100% Unclamped Inductive Switch (UIS) test in production
- Low on-resistance, fast switching speed
- Drain-source breakdown voltage is -60V min at VGS = 0V, ID = -250μA, TA = +25°C
- Zero gate voltage drain current is -1µA max at VDS = -48V, VGS = 0V, TA = +25°C
- Gate-source leakage is ±100nA max at VGS = ±20V, VDS = 0V, TA = +25°C
- Static drain-source on-resistance is 110mohm typ at VGS = -10V, ID = -2.2A, TA = +25°C
- Total gate charge (VGS = -4.5V) is 6.2nC typ at VDS = -30V, ID = -12A, TA = +25°C
- Body diode reverse recovery charge is 17nC typ at IF = -12A, di/dt = 100A/μs, TA = +25°C
- SOT223 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
1.2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001