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DMP2165UW-7
Power MOSFET, P Channel, 20 V, 2.5 A, 0.09 ohm, SOT-323, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMP2165UW-7
Order Code
Full Reel4318570
Cut Tape3405189
Cut Tape3405189RL
Your Part Number
1,989 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 100 | CNY2.150 | CNY215.00 |
Cut Tape
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.150 (CNY2.4295) |
| 500+ | CNY1.190 (CNY1.3447) |
| 1500+ | CNY1.170 (CNY1.3221) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.884 (CNY0.9989) |
| 9000+ | CNY0.867 (CNY0.9797) |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMP2165UW-7
Order Code
Full Reel4318570
Cut Tape3405189
Cut Tape3405189RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.5A
Drain Source On State Resistance0.09ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMP2165UW-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include motor control, power management functions, backlighting.
- Low on-resistance, low input capacitance
- Fast switching speed, low input/output leakage
- Drain-source voltage is -20V at TA = +25°C
- Gate-source voltage is ±12V at TA = +25°C
- Continuous drain current is -2.5A at TA = +25°C, steady state, VGS = -4.5V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is -15A at TA = +25°C
- Total power dissipation is 0.5W at TA = +25°C
- Static drain-source on-resistance is 90mohm max at VGS = -4.5V, ID = -1.5A, TA = +25°C
- SOT323 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.5A
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.09ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002