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DMN62D0U-7
Power MOSFET, N Channel, 60 V, 380 mA, 2 ohm, SOT-23, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMN62D0U-7Copy
Manufacturer Standard Lead Time52 weeks
Order Code
Full Reel4318595
Re-Reel3518381RL
Cut Tape3518381
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.530 | CNY7.65 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.530 (CNY1.7289) |
| 50+ | CNY1.240 (CNY1.4012) |
| 100+ | CNY0.950 (CNY1.0735) |
| 500+ | CNY0.636 (CNY0.7187) |
| 1500+ | CNY0.624 (CNY0.7051) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.497 (CNY0.5616) |
| 9000+ | CNY0.488 (CNY0.5514) |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN62D0U-7Copy
Manufacturer Standard Lead Time52 weeks
Order Code
Full Reel4318595
Re-Reel3518381RL
Cut Tape3518381
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id380mA
Drain Source On State Resistance2ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation380mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
DMN62D0U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include motor controls, power-management functions, and backlighting.
- Low on-resistance, low input capacitance, ESD protected up to 1kV
- Fast switching speed, low input/output leakage
- Drain-source voltage is 60V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is 380mA at TA = +25°C, VGS = 4.5V, steady state
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 1.2A at TA = +25°C
- Total power dissipation is 380mW at TA = +25°C
- Maximum continuous body diode forward current is 0.4A at TA = +25°C
- SOT23 package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
380mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
380mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000045