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DMN3731U-7
Power MOSFET, N Channel, 30 V, 900 mA, 0.46 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN3731U-7
Order Code
Re-Reel3943613RL
Cut Tape3943613
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY2.320 | CNY11.60 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.320 (CNY2.6216) |
| 10+ | CNY1.240 (CNY1.4012) |
| 100+ | CNY0.860 (CNY0.9718) |
| 500+ | CNY0.650 (CNY0.7345) |
| 1000+ | CNY0.412 (CNY0.4656) |
| 5000+ | CNY0.405 (CNY0.4576) |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN3731U-7
Order Code
Re-Reel3943613RL
Cut Tape3943613
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id900mA
Drain Source On State Resistance0.46ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max950mV
Power Dissipation580mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMN3731U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. Typical applications include load switch, portable applications, power management functions.
- Low VGS(TH), can be driven directly from a battery
- Low RDS(ON), ESD protected gate
- Drain-source voltage is 30V at TA = +25°C
- Gate-source voltage is ±8V at TA = +25°C
- Continuous drain current is 0.9A at TA = +25°C, VGS = 4.5V, steady state
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 3A at TA = +25°C
- Total power dissipation is 0.4W at TA = +25°C
- Maximum continuous body diode forward current is 0.55A at TA = +25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
900mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
580mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.46ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
950mV
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001