Print Page
Image is for illustrative purposes only. Please refer to product description.

ManufacturerDIODES INC.
Manufacturer Part NoDMN3023L-7
Order Code
Cut Tape3127331
Cut Tape3127331RL
Your Part Number
5,103 In Stock
3,000 more incoming. You can reserve stock now
5103 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.150 (CNY2.4295) |
| 50+ | CNY1.870 (CNY2.1131) |
| 100+ | CNY1.590 (CNY1.7967) |
| 500+ | CNY1.090 (CNY1.2317) |
| 1500+ | CNY1.070 (CNY1.2091) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY10.75 (CNY12.15 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN3023L-7
Order Code
Cut Tape3127331
Cut Tape3127331RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id6.2A
Drain Source On State Resistance0.025ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation900mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMN3023L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include load switch, DC-DC converters, and power management functions.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage, ESD protected gate
- Drain-source voltage is 30V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is 6.2A at TA = +25°C, steady state, VGS = 10V
- Pulsed drain current (380µs pulse, duty cycle = 1%) is 44A at TA = +25°C
- Total power dissipation is 0.9W at TA = +25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
900mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536
