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DMN2028USS-13
Power MOSFET, N Channel, 20 V, 9.8 A, 0.02 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN2028USS-13
Order Code
Re-Reel1863719RL
Cut Tape1863719
Your Part Number
810 In Stock
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810 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY4.240 | CNY21.20 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.240 (CNY4.7912) |
| 50+ | CNY3.500 (CNY3.955) |
| 100+ | CNY2.760 (CNY3.1188) |
| 500+ | CNY2.120 (CNY2.3956) |
| 1000+ | CNY1.910 (CNY2.1583) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN2028USS-13
Order Code
Re-Reel1863719RL
Cut Tape1863719
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id9.8A
Drain Source On State Resistance0.02ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.56W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The DMN2028USS-13 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It has been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low ON-resistance
- Low input capacitance
- Fast switching speed
- Low output leakage
- ESD Protected up to 2KV
- Halogen-free, Green device
- Qualified to AEC-Q101 standards for high reliability
- Moisture sensitivity level 1 as per J-STD-020
- UL94V-0 Flammability rating
Applications
Power Management, Aerospace, Defence, Military, Automotive, Portable Devices
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.8A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
1.56W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000544