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DMG301NU-13
Power MOSFET, N Channel, 25 V, 260 mA, 4 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMG301NU-13Copy
Manufacturer Standard Lead Time46 weeks
Order Code
Re-Reel3127317RL
Cut Tape3127317
Your Part Number
13,321 In Stock
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13,321 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY0.942 | CNY4.71 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY0.942 (CNY1.0645) |
| 10+ | CNY0.870 (CNY0.9831) |
| 100+ | CNY0.855 (CNY0.9662) |
| 500+ | CNY0.841 (CNY0.9503) |
| 1000+ | CNY0.826 (CNY0.9334) |
| 5000+ | CNY0.810 (CNY0.9153) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG301NU-13Copy
Manufacturer Standard Lead Time46 weeks
Order Code
Re-Reel3127317RL
Cut Tape3127317
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id260mA
Drain Source On State Resistance4ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.1V
Power Dissipation320mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMG301NU-13 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include DC-DC converters, power management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Small surface mount package, ESD protected gate (>6kV human body model)
- Drain-source voltage is 25V at TA=+25°C
- Gate-source voltage is 8V at TA=+25°C
- Pulsed drain current (10µS pulse, duty cycle=1%) is 1.5A at TA=+25°C
- Maximum body diode forward current is 0.5A at TA=+25°C
- Total power dissipation is 0.32W
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
260mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
320mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000145