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DMG2302UK-7
Power MOSFET, N Channel, 20 V, 2.8 A, 0.09 ohm, SOT-23, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMG2302UK-7
Order Code
Full Reel3127526
Re-Reel3127315RL
Cut Tape3127315
Your Part Number
28,127 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.680 | CNY8.40 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.680 (CNY1.8984) |
| 50+ | CNY1.370 (CNY1.5481) |
| 100+ | CNY1.050 (CNY1.1865) |
| 500+ | CNY0.675 (CNY0.7628) |
| 1500+ | CNY0.662 (CNY0.7481) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.435 (CNY0.4916) |
| 9000+ | CNY0.367 (CNY0.4147) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG2302UK-7
Order Code
Full Reel3127526
Re-Reel3127315RL
Cut Tape3127315
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.8A
Drain Source On State Resistance0.09ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation660mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMG2302UK-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include backlighting, power management functions, DC-DC converters, and motor control.
- Low on-resistance, low input capacitance
- Fast switching speed, ESD protected gate
- Drain-source voltage is 20V at TA=+25°C
- Gate-source voltage is ±12V at TA=+25°C
- Continuous drain current is 2.8A at TA=+25°C, steady state, VGS=4.5V
- Pulsed drain current (10µS pulse, duty cycle=1%) is 12A at TA=+25°C
- Maximum continuous body diode forward current is 1.1A at TA=+25°C
- Total power dissipation is 0.66W
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.8A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
660mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.09ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000145