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DMC25D0UVT-7
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 400 mA, 400 mA, 4 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMC25D0UVT-7Copy
Manufacturer Standard Lead Time77 weeks
Order Code
Re-Reel3944030RL
Cut Tape3944030
Your Part Number
2,405 In Stock
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2,405 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | CNY5.650 | CNY28.25 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.650 (CNY6.3845) |
| 10+ | CNY3.550 (CNY4.0115) |
| 100+ | CNY2.320 (CNY2.6216) |
| 500+ | CNY1.780 (CNY2.0114) |
| 1000+ | CNY1.380 (CNY1.5594) |
| 5000+ | CNY1.110 (CNY1.2543) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC25D0UVT-7Copy
Manufacturer Standard Lead Time77 weeks
Order Code
Re-Reel3944030RL
Cut Tape3944030
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id400mA
Drain Source Voltage Vds P Channel25V
On Resistance Rds(on)3.8ohm
Continuous Drain Current Id N Channel400mA
Continuous Drain Current Id P Channel400mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel4ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.08ohm
Transistor Case StyleTSOT-26
Gate Source Threshold Voltage Max850mV
No. of Pins6Pins
Power Dissipation Pd1.2W
Power Dissipation N Channel1.2W
Power Dissipation P Channel1.2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
400mA
On Resistance Rds(on)
3.8ohm
Continuous Drain Current Id P Channel
400mA
Drain Source On State Resistance N Channel
4ohm
Drain Source On State Resistance P Channel
0.08ohm
Gate Source Threshold Voltage Max
850mV
Power Dissipation Pd
1.2W
Power Dissipation P Channel
1.2W
Product Range
-
Automotive Qualification Standard
-
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
400mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSOT-26
No. of Pins
6Pins
Power Dissipation N Channel
1.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001