Print Page
DMC2053UVT-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4.6 A, 4.6 A, 0.035 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMC2053UVT-7
Order Code
Re-Reel3944024RL
Cut Tape3944024
Your Part Number
380 In Stock
Need more?
380 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | CNY4.350 | CNY21.75 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.350 (CNY4.9155) |
| 10+ | CNY2.690 (CNY3.0397) |
| 100+ | CNY1.720 (CNY1.9436) |
| 500+ | CNY1.340 (CNY1.5142) |
| 1000+ | CNY1.190 (CNY1.3447) |
| 5000+ | CNY1.170 (CNY1.3221) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC2053UVT-7
Order Code
Re-Reel3944024RL
Cut Tape3944024
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id4.6A
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel4.6A
On Resistance Rds(on)0.035ohm
Continuous Drain Current Id P Channel4.6A
Drain Source On State Resistance N Channel0.035ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.074ohm
Transistor Case StyleTSOT-26
Gate Source Threshold Voltage Max1V
Power Dissipation Pd1.1W
No. of Pins6Pins
Power Dissipation N Channel1.1W
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
4.6A
Continuous Drain Current Id N Channel
4.6A
Continuous Drain Current Id P Channel
4.6A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.074ohm
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Power Dissipation P Channel
1.1W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.035ohm
Drain Source On State Resistance N Channel
0.035ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSOT-26
Power Dissipation Pd
1.1W
Power Dissipation N Channel
1.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001