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APT13003NZTR-G1
Bipolar (BJT) Single Transistor, NPN, 530 V, 1.5 A, 1 W, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoAPT13003NZTR-G1
Order Code3943071
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max530V
Continuous Collector Current1.5A
Power Dissipation1W
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency4MHz
DC Current Gain hFE Min5hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1.5A
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
5hFE
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Collector Emitter Voltage Max
530V
Power Dissipation
1W
Transistor Mounting
Through Hole
Transition Frequency
4MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001