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2N7002A-7
Power MOSFET, N Channel, 60 V, 180 mA, 6 ohm, SOT-23, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part No2N7002A-7
Order Code
Full Reel3127561
Re-Reel3127180RL
Cut Tape3127180
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY1.050 | CNY5.25 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.050 (CNY1.1865) |
| 50+ | CNY0.850 (CNY0.9605) |
| 100+ | CNY0.649 (CNY0.7334) |
| 500+ | CNY0.425 (CNY0.4802) |
| 1500+ | CNY0.417 (CNY0.4712) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.321 (CNY0.3627) |
| 9000+ | CNY0.315 (CNY0.356) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part No2N7002A-7
Order Code
Full Reel3127561
Re-Reel3127180RL
Cut Tape3127180
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id180mA
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation370mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
2N7002A-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications and motor control.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Small surface mount package
- ESD protected gate, 1.2kV HBM, 1kV CDM
- Drain-source voltage is 60V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Pulsed drain current (10µs pulse, duty cycle=1%) is 800mA at TA=+25°C
- Static drain-source on-resistance is 3.5ohm typ at VGS=5.0V, ID=0.115A, TJ=+25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
180mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
5V
Power Dissipation
370mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000002