Reduced PriceOffersContact UsHelpTrack Orders用中文
Register
0
0 ItemsCNY0.00

150W Darlington Transistors:

12 Products Found
Find a huge range of 150W Darlington Transistors at element14 China. We stock a wide range of Darlington Transistors, such as 65W, 40W, 1W & 150W Darlington Transistors from the worlds top manufacturers including: Multicomp Pro & Onsemi
View
Buyer
Engineer
Manufacturer
Transistor Polarity
Collector Emitter Voltage V(br)ceo
Power Dissipation Pd
DC Collector Current
RF Transistor Case
Transistor Case Style
No. of Pins
DC Current Gain hFE
Transistor Mounting
Operating Temperature Max
Product Range
Qualification
Packaging
Filter(s) Applied
1 Filter(s) Selected
ComparePrice ForQuantity
2N6059
MULTICOMP PRO 2N6059
3473369

Data Sheet

RoHS

MULTICOMP PRO
  1. Darlington Transistor
  2. NPN
  3. 100 V
  4. 150 W
  5. 12 A
  6. TO-3
  7. 2 Pins
Each
1+
CNY31.650
(CNY35.7645)
10+
CNY17.760
(CNY20.0688)
100+
CNY15.460
(CNY17.4698)
500+
CNY14.170
(CNY16.0121)
1000+
CNY13.800
(CNY15.594)
NPN
100V
150W
12A
TO-3
TO-3
2Pins
750hFE
Through Hole
200°C
-
-
MJH11022G
ONSEMI MJH11022G
1611190

Data Sheet

RoHS

ONSEMI
  1. Darlington Transistor
  2. Darlington
  3. NPN
  4. 250 V
  5. 150 W
  6. 15 A
  7. TO-218
  8. 3 Pins
Each
1+
CNY42.650
(CNY48.1945)
10+
CNY24.130
(CNY27.2669)
100+
CNY18.680
(CNY21.1084)
500+
CNY18.310
(CNY20.6903)
1000+
CNY17.940
(CNY20.2722)
NPN
250V
150W
15A
TO-218
-
3Pins
100hFE
Through Hole
150°C
-
-
MJ3001
MULTICOMP PRO MJ3001
3473377

Data Sheet

RoHS

MULTICOMP PRO
  1. Darlington Transistor
  2. Darlington
  3. NPN
  4. 80 V
  5. 150 W
  6. 10 A
  7. TO-3
  8. 2 Pins
Each
1+
CNY24.110
(CNY27.2443)
10+
CNY13.530
(CNY15.2889)
100+
CNY11.780
(CNY13.3114)
500+
CNY10.770
(CNY12.1701)
1000+
CNY10.580
(CNY11.9554)
More Pricing...
NPN
80V
150W
10A
TO-3
-
2Pins
1000hFE
Through Hole
200°C
-
-
2N6058
MULTICOMP PRO 2N6058
3473370

Data Sheet

RoHS

MULTICOMP PRO
  1. Darlington Transistor
  2. NPN
  3. 80 V
  4. 150 W
  5. 12 A
  6. TO-3
  7. 2 Pins
Each
1+
CNY28.710
(CNY32.4423)
10+
CNY16.100
(CNY18.193)
100+
CNY13.990
(CNY15.8087)
500+
CNY12.880
(CNY14.5544)
1000+
CNY12.520
(CNY14.1476)
NPN
80V
150W
12A
TO-3
-
2Pins
100hFE
Through Hole
200°C
-
-
MJH11019G
ONSEMI MJH11019G
2101381

Data Sheet

RoHS

ONSEMI
  1. Darlington Transistor
  2. Darlington
  3. PNP
  4. 200 V
  5. 150 W
  6. 15 A
  7. TO-247
  8. 3 Pins
Each
1+
CNY43.940
(CNY49.6522)
10+
CNY23.470
(CNY26.5211)
100+
CNY20.650
(CNY23.3345)
500+
CNY20.240
(CNY22.8712)
1000+
CNY19.830
(CNY22.4079)
PNP
200V
150W
15A
TO-247
-
3Pins
400hFE
Through Hole
150°C
-
-
MJH11020G
ONSEMI MJH11020G
2101382

Data Sheet

RoHS

ONSEMI
  1. Darlington Transistor
  2. NPN
  3. 200 V
  4. 150 W
  5. 15 A
  6. TO-247
  7. 3 Pins
Each
1+
CNY49.650
(CNY56.1045)
10+
CNY28.410
(CNY32.1033)
100+
CNY22.780
(CNY25.7414)
500+
CNY22.330
(CNY25.2329)
1000+
CNY21.870
(CNY24.7131)
NPN
200V
150W
15A
TO-247
-
3Pins
400hFE
Through Hole
150°C
-
-
MJH11017G
ONSEMI MJH11017G
2774793

Data Sheet

RoHS

ONSEMI
  1. Darlington Transistor
  2. PNP
  3. 150 V
  4. 150 W
  5. 15 A
  6. TO-218
  7. 3 Pins
Each
1+
CNY38.240
(CNY43.2112)
10+
CNY21.710
(CNY24.5323)
100+
CNY20.930
(CNY23.6509)
500+
CNY20.140
(CNY22.7582)
1000+
CNY19.770
(CNY22.3401)
PNP
150V
150W
15A
TO-218
-
3Pins
100hFE
Through Hole
150°C
-
-
BUB323ZT4G
ONSEMI BUB323ZT4G
1653614

Data Sheet

RoHS

ONSEMI
  1. Darlington Transistor
  2. Darlington
  3. NPN
  4. 350 V
  5. 150 W
  6. 10 A
  7. TO-263 (D2PAK)
  8. 3 Pins
Each (Supplied on Cut Tape)
Cut Tape
1+
CNY26.890
(CNY30.3857)
10+
CNY18.060
(CNY20.4078)
100+
CNY13.180
(CNY14.8934)
500+
CNY11.360
(CNY12.8368)
1000+
CNY11.140
(CNY12.5882)
NPN
350V
150W
10A
TO-263 (D2PAK)
-
3Pins
500hFE
Surface Mount
175°C
-
AEC-Q101
2N6052.
MULTICOMP PRO 2N6052.
4666937

Data Sheet

MULTICOMP PRO
  1. Darlington Transistor
  2. PNP
  3. 100 V
  4. 150 W
  5. 12 A
  6. TO-3
  7. 3 Pins
Each
1+
CNY8.770
(CNY9.9101)
10+
CNY4.570
(CNY5.1641)
100+
CNY3.600
(CNY4.068)
500+
CNY2.960
(CNY3.3448)
1000+
CNY2.680
(CNY3.0284)
More Pricing...
PNP
100V
150W
12A
TO-3
-
3Pins
750hFE
Through Hole
200°C
Multicomp Pro Darlington PNP Transistors
AEC-Q101
2N6051..
MULTICOMP PRO 2N6051..
1165916

Data Sheet

RoHS

MULTICOMP PRO
  1. Darlington Transistor
  2. Darlington
  3. PNP
  4. 80 V
  5. 150 W
  6. 12 A
  7. TO-3
  8. 2 Pins
Each
1+
CNY25.580
(CNY28.9054)
PNP
80V
150W
12A
TO-3
-
2Pins
18000hFE
Through Hole
200°C
-
-
MJH11021G
ONSEMI MJH11021G
1611189

Data Sheet

RoHS

ONSEMI
  1. Darlington Transistor
  2. PNP
  3. 250 V
  4. 150 W
  5. 15 A
  6. TO-247
  7. 3 Pins
Each
1+
CNY39.730
(CNY44.8949)
10+
CNY23.680
(CNY26.7584)
100+
CNY18.980
(CNY21.4474)
500+
CNY18.610
(CNY21.0293)
1000+
CNY18.230
(CNY20.5999)
PNP
250V
150W
15A
TO-247
-
3Pins
400hFE
Through Hole
150°C
-
-
MJ2501
MULTICOMP PRO MJ2501
9453130

Data Sheet

RoHS

MULTICOMP PRO
  1. Darlington Transistor
  2. Darlington
  3. PNP
  4. 80 V
  5. 150 W
  6. 10 A
  7. TO-3
  8. 2 Pins
Each
1+
CNY61.740
(CNY69.7662)
10+
CNY44.070
(CNY49.7991)
100+
CNY34.320
(CNY38.7816)
500+
CNY25.760
(CNY29.1088)
1000+
CNY19.320
(CNY21.8316)
PNP
80V
150W
10A
TO-3
-
2Pins
1000hFE
Through Hole
200°C
-
-
1-12 of 12 items
of 1 page(s)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

ON Semi EliteSiC SiC MOSFET Half-Bridge & Full-Bridge Power Modules (P-Channel, 1.2 kV)
ONSEMI
ON Semi EliteSiC SiC MOSFET Half-Bridge & Full-Bridge Power Modules (P-Channel, 1.2 kV)
ONSEMI
High-Performance 1.2 kV Infineon TRENCHSTOP™ IGBT Power Devices
INFINEON
High-Performance 1.2 kV Infineon TRENCHSTOP™ IGBT Power Devices
INFINEON
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
Bipolar transistors
DIOTEC
Bipolar transistors
DIOTEC
Broad range of Bridge Rectifiers that maximize board space and improve reliability
DIODES
Broad range of Bridge Rectifiers that maximize board space and improve reliability
DIODES
Infineon CoolGaN™ 100 V e‑Mode Power Transistor
INFINEON
Infineon CoolGaN™ 100 V e‑Mode Power Transistor
INFINEON
YAGEO XSEMI range MOSFETS
YAGEO XSEMI
YAGEO XSEMI range MOSFETS
YAGEO XSEMI
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
600V Gallium Nitride (GaN) Transistor
INFINEON
600V Gallium Nitride (GaN) Transistor
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
Norton Secured
BSI ANAB
Mark of trust multi scheme-9001 14001 45001
electronical-license
Anti Fraud Call
We Chat
Ali Pay
Union Pay
Trade Account
cash on delivery
money transfer