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PBRN113ZT,215

Bipolar Pre-Biased / Digital Transistor, Single NPN, 40 V, 600 mA, 1 kohm, 10 kohm

NEXPERIA
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NEXPERIA PBRN113ZT,215 Bipolar Pre-Biased / Digital Transistor, Single NPN, 40 V, 600 mA, 1 kohm, 10 kohm
ManufacturerNEXPERIA
Manufacturer Part NoPBRN113ZT,215Copy
Manufacturer Standard Lead Time63 weeks
Order Code
Re-Reel3439897RL
Cut Tape3439897
Product RangePBRN113Z Series
Your Part Number
Technical Datasheet

Data Sheet

See all Technical Docs
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Packaging Options
Packaging TypeQuantityUnit Price:Total
Cut Tape5CNY2.300CNY11.50
Total Price (inc GST) CNY11.50 (CNY13.00)
Cut Tape & Re-Reel
QuantityPrice (inc GST)
5+CNY2.300 (CNY2.599)
10+CNY1.420 (CNY1.6046)
100+CNY0.884 (CNY0.9989)
500+CNY0.648 (CNY0.7322)
1000+CNY0.580 (CNY0.6554)
5000+CNY0.572 (CNY0.6464)
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Product Information

  • NEXPERIA
    ManufacturerNEXPERIA
    Manufacturer Part NoPBRN113ZT,215Copy
    Manufacturer Standard Lead Time63 weeks
    Order Code
    Re-Reel3439897RL
    Cut Tape3439897
    Product RangePBRN113Z Series
    Technical Datasheet

    Data Sheet

    Digital Transistor PolaritySingle NPN
    Transistor PolaritySingle NPN
    Collector Emitter Voltage Max NPN40V
    Collector Emitter Voltage V(br)ceo40V
    Continuous Collector Current Ic600mA
    Collector Emitter Voltage Max PNP-
    Continuous Collector Current600mA
    Base Input Resistor R11kohm
    Base Emitter Resistor R210kohm
    Resistor Ratio, R1 / R2-
    RF Transistor CaseTO-236AB
    Transistor Case StyleTO-236AB
    No. of Pins3 Pin
    Transistor MountingSurface Mount
    Power Dissipation250mW
    Operating Temperature Max150°C
    DC Current Gain hFE Min450hFE
    Product RangePBRN113Z Series
    Qualification-
    Automotive Qualification Standard-
    MSLMSL 1 - Unlimited
    SVHCNo SVHC (25-Jun-2025)

Technical Specifications

  • Digital Transistor Polarity

    Single NPN

    Collector Emitter Voltage Max NPN

    40V

    Continuous Collector Current Ic

    600mA

    Continuous Collector Current

    600mA

    Base Emitter Resistor R2

    10kohm

    RF Transistor Case

    TO-236AB

    No. of Pins

    3 Pin

    Power Dissipation

    250mW

    DC Current Gain hFE Min

    450hFE

    Qualification

    -

    MSL

    MSL 1 - Unlimited

    Transistor Polarity

    Single NPN

    Collector Emitter Voltage V(br)ceo

    40V

    Collector Emitter Voltage Max PNP

    -

    Base Input Resistor R1

    1kohm

    Resistor Ratio, R1 / R2

    -

    Transistor Case Style

    TO-236AB

    Transistor Mounting

    Surface Mount

    Operating Temperature Max

    150°C

    Product Range

    PBRN113Z Series

    Automotive Qualification Standard

    -

    SVHC

    No SVHC (25-Jun-2025)

Technical Docs 2

Legislation and Environmental

  • Country of Origin:
    Country in which last significant manufacturing process was carried outCountry of Origin:    Malaysia
    Country in which last significant manufacturing process was carried out
    Tariff No:85412900
    US ECCN:EAR99
    EU ECCN:NLR
    RoHS Compliant:Yes

    RoHS

    RoHS Phthalates Compliant:Yes

    RoHS

    SVHC:No SVHC (25-Jun-2025)
    Download Product Compliance Certificate

    Product Compliance Certificate

    Weight (kg):.000045