Silicon Carbide (SiC) MOSFETs & Modules

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Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price (inc GST)	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max

NXH020P120MNF1PTG	3973632 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Half Bridge Dual N Channel 51 A 1.2 kV 0.02 ohm Module	Each	1+ CNY1,078.600(CNY1,218.818) 5+ CNY970.740(CNY1,096.9362) 10+ CNY913.210(CNY1,031.9273)	Half Bridge	Dual N Channel	51A	1.2kV	0.02ohm	18Pins	20V	2.81V	119W	175°C
NXH040P120MNF1PTG	3973634 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Half Bridge Dual N Channel 30 A 1.2 kV 0.042 ohm Module	Each	1+ CNY580.900(CNY656.417) 5+ CNY522.800(CNY590.764) 10+ CNY491.820(CNY555.7566) 50+ CNY481.990(CNY544.6487)	Half Bridge	Dual N Channel	30A	1.2kV	0.042ohm	18Pins	20V	2.81V	74W	175°C
NXH020F120MNF1PTG	3929798 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET FourPack Four N Channel 51 A 1.2 kV 0.02 ohm Module	Each	1+ CNY1,250.250(CNY1,412.7825) 5+ CNY1,236.240(CNY1,396.9512) 10+ CNY1,222.220(CNY1,381.1086)	FourPack	Four N Channel	51A	1.2kV	0.02ohm	22Pins	20V	2.81V	119W	175°C
NXH040F120MNF1PTG	3929799 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET FourPack Four N Channel 30 A 1.2 kV 0.042 ohm Module	Each	1+ CNY739.330(CNY835.4429) 5+ CNY699.550(CNY790.4915) 10+ CNY659.770(CNY745.5401) 50+ CNY646.580(CNY730.6354)	FourPack	Four N Channel	30A	1.2kV	0.042ohm	22Pins	20V	2.81V	74W	175°C

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