Print Page
NTS4101PT1G
Power MOSFET, P Channel, 20 V, 1.37 A, 0.12 ohm, SOT-323, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTS4101PT1GCopy
Order Code
Full Reel2442264
Re-Reel1453617RL
Cut Tape1453617
Your Part Number
127,237 In Stock
Need more?
53,865 Next business day delivery available(Shanghai stock)
73,372 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY2.090 | CNY10.45 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.090 (CNY2.3617) |
| 50+ | CNY1.710 (CNY1.9323) |
| 100+ | CNY1.330 (CNY1.5029) |
| 500+ | CNY0.779 (CNY0.8803) |
| 1500+ | CNY0.764 (CNY0.8633) |
| 3000+ | CNY0.726 (CNY0.8204) |
| 7500+ | CNY0.688 (CNY0.7774) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.831 (CNY0.939) |
| 9000+ | CNY0.815 (CNY0.921) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTS4101PT1GCopy
Order Code
Full Reel2442264
Re-Reel1453617RL
Cut Tape1453617
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.37A
Drain Source On State Resistance0.12ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max640mV
Power Dissipation329mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTS4101PT1G is a P-channel Power MOSFET offers -20V drain source voltage and -1.37A continuous drain current. It is suitable for use in high side load switch, charging circuit, single cell battery applications such as cell phones, digital cameras and PDAs.
- Leading -20V Trench for low RDS (ON)
- -2.5V Rated for low voltage gate drive
- Surface-mount for small footprint (2 x 2mm)
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Portable Devices, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.37A
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4.5V
Power Dissipation
329mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.12ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
640mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005