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DMHT10H032LFJ-13
Dual MOSFET, N Channel, 100 V, 6 A, 0.033 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMHT10H032LFJ-13
Order Code
Re-Reel3589313RL
Cut Tape3589313
Your Part Number
2,336 In Stock
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2336 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY27.950 | CNY27.95 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY27.950 (CNY31.5835) |
| 10+ | CNY18.820 (CNY21.2666) |
| 100+ | CNY15.310 (CNY17.3003) |
| 500+ | CNY13.340 (CNY15.0742) |
| 1000+ | CNY8.880 (CNY10.0344) |
| 5000+ | CNY4.420 (CNY4.9946) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMHT10H032LFJ-13
Order Code
Re-Reel3589313RL
Cut Tape3589313
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id6A
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds100V
Drain Source On State Resistance0.025ohm
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel-
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Drain Source On State Resistance N Channel0.033ohm
Drain Source On State Resistance P Channel-
Power Dissipation900mW
Transistor Case StyleDFN5045
No. of Pins12Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds
100V
Continuous Drain Current Id N Channel
6A
Rds(on) Test Voltage
10V
Drain Source On State Resistance N Channel
0.033ohm
Power Dissipation
900mW
No. of Pins
12Pins
Power Dissipation P Channel
-
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Continuous Drain Current Id
6A
Drain Source Voltage Vds P Channel
-
Drain Source On State Resistance
0.025ohm
Continuous Drain Current Id P Channel
-
Gate Source Threshold Voltage Max
2.5V
Drain Source On State Resistance P Channel
-
Transistor Case Style
DFN5045
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121