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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY22.740 (CNY25.6962) |
| 10+ | CNY17.240 (CNY19.4812) |
| 25+ | CNY16.270 (CNY18.3851) |
| 50+ | CNY15.550 (CNY17.5715) |
| 100+ | CNY14.840 (CNY16.7692) |
| 250+ | CNY14.130 (CNY15.9669) |
| 500+ | CNY13.510 (CNY15.2663) |
| 1000+ | CNY12.720 (CNY14.3736) |
IR21531DPBF 的替代之选
找到 1 件产品
产品概述
The IR21531DPBF is a self-oscillating Half-bridge Gate Driver IC incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IC provides more functionality and is easier to use. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on Vcc has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
- True micro power start-up
- Tighter initial dead-time control
- Low temperature coefficient dead time
- Shutdown features on CT pin
- Lower power level-shifting circuit
- Constant LO, HO pulse widths at start-up
- Low side output in phase with RT
- Excellent latch immunity on all inputs and outputs
警告
Finally special attention has been paid to maximizing the latch immunity of the device and providing comprehensive ESD protection all pins. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
半桥
8引脚
通孔安装
-
10V
-40°C
-
IR21531
-
-
IGBT, MOSFET
DIP
-
-
16.8V
125°C
660ns
-
No SVHC (21-Jan-2025)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
